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在宽带隙半导体碳化硅（ＳｉＣ）材料上，将一个ｎｐｎ双极存取晶体管和一个ｐｎｐ存储电容器合并成垂直集成的一晶体管存储单元，大大地降低了热产生速率，通过将高温下获得的电荷恢复数据外推，表明该存储器单元的室温恢复时间可超过１０６年。
Combining an npn bipolar transistor and a pnp storage capacitor into a vertically integrated transistor memory cell on a wide bandgap semiconductor silicon carbide (SiC) material greatly reduces the rate of heat generation by reducing the charge obtained at high temperatures Extrapolation of recovered data indicates that the memory cell’s room temperature recovery time can exceed 106 years.