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通过对硅S波段微波功率双极晶体管的结终端技术实验数据对比和晶体管镇流电阻设计的考虑,提高了微波功率双极器件的击穿电压和电流通过能力及抗烧毁能力。微波器件采用这些技术后,器件的工作频率不但没有降低,反而从原来的S波段的低端(2.25～2.55 GHz),提高到了中高端(3.1～3.5 GHz);器件的集电结反向击穿电压50 V以上的比率由原来的17.6%提高到63.5%;器件的功率增益也从6 dB提高到7.5 dB以上,证明了该工艺方法的有效性与可行性。
Based on the experimental data comparison and the design of transistor ballast resistance of the S-band microwave power bipolar transistor, the breakdown voltage and current passing capability of the microwave power bipolar device and the anti-burnout ability are improved. Microwave devices using these technologies, the device operating frequency not only did not reduce, but from the original low-end S band (2.25 ~ 2.55 GHz), to the high-end (3.1 ~ 3.5 GHz); device collector junction reverse The voltage of above 50 V is increased from 17.6% to 63.5%, and the power gain of the device is also increased from 6 dB to above 7.5 dB, which proves the effectiveness and feasibility of this method.