论文部分内容阅读
三菱电机已开始出售用于商业通信系统发射信号放大的GaAs器件,它们是五种大功率GaAs FET和一种GaAs单片微波集成电路。 GaAs FET(MGFK)系列输入输出阻抗在管壳内部匹配成50Ω,用14～14.5GHz频率,输出功率0.3～5.5W,是用MBE法制造的。为了在高感应率衬底上形成内匹配电路而缩小了电路尺寸。单片集成电路(MGF 7201),最适用于14～14.5GHz小信号放大,除了连接规定的电源以外,还能得到18dB的功率增益,输出
Mitsubishi Electric has begun selling GaAs devices for signal amplification in commercial communications systems, which are five high-power GaAs FETs and a GaAs monolithic microwave integrated circuit. GaAs FET (MGFK) series of input and output impedance matching in the shell of 50Ω, with 14 ~ 14.5GHz frequency, the output power of 0.3 ~ 5.5W, MBE method is used. Circuit size is reduced in order to form an internal matching circuit on a high-inductance substrate. Monolithic integrated circuit (MGF 7201), the most suitable for 14 ~ 14.5GHz small signal amplification, in addition to connecting the specified power supply, but also get 18dB power gain, the output