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随着输出功率、转换效率、可靠性和制造工艺的提高以及成本的降低,大功率半导体激光器越来越广泛地应用于许多新的领域。大部分商业化销售的半导体激光器阵列/巴条是用铟作为焊料封装的。然而,在半导体激光器封装过程中不可避免地会在贴片层形成一些小空洞,这些小空洞在铟的电迁移和电热迁移作用下逐渐变大,这将导致芯片贴片层形成大量的空洞,造成芯片局部温度迅速上升。针对808 nm连续波40 W传导制冷单巴条半导体激光器阵列,系统地分析了半导体激光器贴片层空洞对发光点温度的影响以及贴片层内不同位置不同尺寸的空洞对发光点温升的影响,得到了发光点温升与空洞尺寸间的关系曲线。提出了利用空洞与发光点温度的关系及空间光谱来估算贴片层的空洞分布的方法,并将估算结果与实验测得的贴片层扫描声学显微图像进行了对比。
With the increase of output power, conversion efficiency, reliability and manufacturing process, and the reduction of cost, high-power semiconductor lasers are used in many new fields more and more widely. Most commercially available semiconductor laser arrays / bars are packaged with indium as a solder. However, during the process of semiconductor laser packaging, some small voids are inevitably formed in the surface of the chip. These small voids gradually increase under the effect of the electromigration and electrothermal migration of indium, which leads to the formation of a large number of voids in the chip patch. Causing the local temperature of the chip to rise rapidly. Aiming at the 808-nm continuous wave 40 W conduction refrigeration single-bar laser diode array, the influence of cavity lasers in semiconductor lasers on the temperature of light-emitting point and the influence of cavity with different size in different positions on the temperature rise of light-emitting point are systematically analyzed. , The relationship between the temperature rise of the light-emitting point and the size of the cavity is obtained. A method to estimate the cavity distribution of the patch by using the relationship between the cavity and the temperature of the light-emitting point and the spatial spectrum is proposed. The results of the estimation are compared with those of the patch-layer scanning acoustical microscopy.