An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

• 作 者: 张立宁 何进 周旺 陈林 徐艺文
• 机 构: Tera-Scale Research Centre,Key Laboratory of Microelectronic Devices and Circuits of Ministry of Edu
• 出 处: Chinese Physics B
• 发表日期: 2010年04期
• 关键词: transistor drain lowering leakage swing intrinsic capacitance attractive introdu

This paper studies an oxide/silicon core/shell nanowire MOSFET(OS-CSNM).Through three-dimensional device simulations,we have demonstrated that the OS-CSNM has a lower leakage current and higher I on /I off ratio after introducing the oxide core into a traditional nanowire MOSFET(TNM).The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off,drain induced barrier lowering and subthreshold swing degradation.Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.

This paper studies an oxide / silicon core / shell nanowire MOSFET (OS-CSNM). Through three-dimensional device simulations, we have demonstrated that the OS-CSNM has a lower leakage current and higher I on / I off ratio after introducing the oxide core into a traditional nanowire MOSFET (TNM). The oxide / silicon OS-CSNM structure suppresses threshold voltage roll-off, drain induced barrier lowering and subthreshold swing degradation. Maller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.