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叙述了围绕第三代红外焦平面的需求所进行的HgCdTe分子束外延以及台面结芯片技术研究的一些成果。对GaAs、Si基大面积异质外延、p型掺杂以及台面刻蚀等主要难点问题进行了阐述。研究表明,7.6 cm(3 in)材料的组分均匀性良好,晶格失配引发的孪晶缺陷可以通过合适的低温成核方法得到有效抑制。在GaAs和Si衬底上外延的HgCdTe材料的(422)X射线衍射半峰宽的典型值为55″～75″。对ICP技术刻蚀HgCdTe的表面形貌、刻蚀速率、反应微观机理、负载效应和刻蚀延迟效应以及刻蚀损伤进行了研究,得到了高选择比的掩模技术和表面光亮、各向异性较好的刻蚀形貌。采用HgCdTe多层材料试制了长波n-on-p以及p-on-n型掺杂异质结器件以及双色红外短波/中波焦平面探测器,取得了一些初步结果。
The results of HgCdTe molecular beam epitaxy and mesa chip technology research around the third generation of infrared focal plane are described. The main difficulties of large-area heteroepitaxy, p-type doping and mesa etching of GaAs and Si are described. Studies have shown that the composition uniformity of the 7.6 cm (3 in) material is good, and the twin defects caused by the lattice mismatch can be effectively suppressed by suitable low-temperature nucleation methods. The HgCdTe material epitaxial on GaAs and Si substrates typically has a (55) ~75 "full width at half maximum of (422) X-ray diffraction. The surface morphology, etching rate, reaction microscopic mechanism, loading effect, etching delay effect and etching damage of HgCdTe by ICP etching were studied, and the mask technology of high selectivity and surface bright, anisotropic Better etching morphology. Some long-wave n-on-p and p-on-n doped heterojunction devices and two-color infrared shortwave / medium-frequency focal plane detectors have been fabricated by using HgCdTe multilayer materials. Some preliminary results have been obtained.