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对与ＩｎＰ晶格匹配的ＩｎＧａＡｓＰ四元系量子阱材料进行了热稳定性能的研究，通过光荧光谱（ＰＬ）的测量发现：量子阱材料在６５０ ℃以上的常规退火条件下，有最大可达１５５ ｍ ｅＶ 的ＰＬ峰值蓝移，表明禁带宽度有明显增大．运用１．０６４ μｍ 连续输出的Ｎｄ：ＹＡＧ激光器进行光子吸收诱导无序（ＰＡＩＤ）技术的研究，比较量子阱材料被辐照前后荧光谱的峰值位置和谱宽，发现量子阱结构的禁带宽度在激光辐照后有明显增大，证明有量子阱混合现象产生．衬底预加热结果表明，提高衬底温度可减少ＰＡＩＤ中的激光辐照时间和平均功率密度．
The thermal stability of InGaAsP quaternary quantum well materials which is lattice-matched with InP has been investigated. By measuring the fluorescence spectrum (PL), it is found that the quantum well material has the maximum reachability under the conventional annealing conditions above 650 ℃ The blue-shifted PL peak at 155 m eV indicates a significant increase in the forbidden band width. The photon absorption induced disorder (PAID) technique was studied with a 1.064 μm continuous output Nd: YAG laser. The peak positions and spectral widths of the fluorescence spectra of the quantum well before and after irradiation were compared. It was found that the band gap of the quantum well structure After laser irradiation, there is a clear increase, showing the phenomenon of quantum well mixed phenomenon. Substrate preheating results show that increasing the substrate temperature can reduce the laser irradiation time PAID and average power density.