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提高大功率晶体管抗热疲劳性能是国家“七·五”攻关项目,我校从80年代初就围绕这一课题开展基础性研究,并于1987年获得了两项晶体管封装方面的国家专利,在此基础上从总体上优化设计了晶体管、解决了制造技术中的关键问题,圆满地完成了省科委1989年下达的研制选极功率晶体管的重点科研项目,并于1990年6月通过了省级鉴定。该晶体管具有高安全性、高可靠性、耐潮湿、耐粉尘、高频性能好、无干扰、自屏蔽、使用方便、电极易于辨认等一系列优点,晶体管的器件内在热稳固性好,间歇工
Improve the thermal fatigue resistance of high-power transistors is the national “Seventh Five-Year” key project, our school from the early 1980s on this issue to carry out basic research and in 1987 won two transistor package of national patents, in On the basis of this, the transistor has been optimized and the key problems in the manufacturing technology have been solved. The key scientific research project of developing the polar power transistor issued by the Provincial Commission of Science and Technology in 1989 has been completed satisfactorily. In June 1990, Level identification. The transistor has a series of advantages of high safety, high reliability, moisture resistance, dust resistance, high frequency performance, non-interference, self-shielding, easy to use, easy to identify the electrode, the transistor internal thermal stability, intermittent