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低功耗技术是当前研究热点,尤其对于手持移动设备,其重要性更为突出.降低电压是降低功耗最直接有效的方式之一,传统CMOS(complementary metal oxide semiconductor)电路在低电压条件下已无法正常工作,而基于能量观点的MRF(Markov random field)电路在超低电压下却拥有BER(bit error rate)超过10~(-5)的良好稳定性,从而引起学术界广泛关注,但是缺少对MRF电路的电路稳定性和其供电电压之间的理论研究.本文基于信息论的观点对MRF电路进行了理论分析与证明,证明出在输出正确概率相同的条件下,MRF电路的供电电压下界低于传统CMOS电路,并且进一步证明出其本质原因.本文的工作可以为后续基于MRF的低功耗高稳定性电路设计提供理论基础.
Low-power technology is the current research focus, especially for handheld mobile devices, the importance of more prominent.Reducing voltage is the most direct and effective way to reduce power consumption, the traditional CMOS (complementary metal oxide semiconductor) circuit under low voltage conditions However, the MRF (Markov random field) circuit based on energy has a good stability that the bit error rate (BER) exceeds 10 -5 due to ultra-low voltage, which attracts wide attentions from scholars. However, Lack of theoretical research on the circuit stability of MRF circuit and its supply voltage.In this paper, MRF circuit is theoretically analyzed and proved from the point of view of information theory, and it is proved that under the same output probability, the lower supply voltage of MRF circuit Which is lower than the traditional CMOS circuit and further prove its essential reason.The work in this paper can provide theoretical basis for the design of low power and high stability circuit based on MRF.