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据日刊《电子展望》1977年7月报导,日本川崎市VLSI技术研究组合共同研究所,最近成功地研制了新式电子束描画装置,它用可变尺寸矩形电子束方式,能对任意大小的矩形一次曝光。由于无需一点一点地扫描,所以描画时间比用点状电子束对矩形一点一点地扫描缩短了一倍。普通电子束描画装置与电视的阴极射线管扫描方式相同,要把收缩很细的图形电子束的直径缩小到图形最细部位的1/4以下,用扫描对其描画。描画大面积图形时,需多次扫描,用大量时间描画是实际上最大的障碍。
According to the Journal “Electronic Outlook” reported in July 1977, Kawasaki City, Japan VLSI Technology Research Co-Institute, recently successfully developed a new electron beam drawing device, which uses a variable-size rectangular electron beam method, the arbitrary size of the rectangle One exposure. Since there is no need to scan bit by bit, the drawing time is doubled by the point-by-point scanning of the rectangle with the point-shaped electron beam. Common electron beam tracing device and television cathode ray tube scanning the same way, it is necessary to narrow the diameter of the finely drawn graph electron beam to the thinnest part of the graph 1/4 below, with the scan to draw it. To draw large areas of graphics, multiple scans are required and drawing with a lot of time is actually the biggest hurdle.