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本文论述在常压ＣＶＤ硅外延系统中，通过ｅ＿ｑＰ＝Ｂ－Ａ／Ｔ，分别计算出ＳｉＨ－Ｃｌ＿３、ＰＣｌ＿３和ＢＣｌ＿３的Ａ和Ｂ二常数值。采用低温深冷工艺，进一步提高硅源的纯度，通过控制ＳｉＨＣｌ＿３的蒸汽压，在晶向为（１１１）和（１００），掺硼电阻率（４～８）×１０￣（－３）Ω·ｃｍ的抛光衬底硅片上，生长出外延层电阻率为３５０Ω·ｃｍ（杂质浓度３．５×１０￣（１３）／ｃｍ￣３），外延层厚度达１２０μｍ的ｐ／ｐ￣＋／硅外延片，制成器件的击穿电压可达１０００Ｖ。
In this paper, the two constants A and B of SiH-Cl_3, PCl_3 and BCl_3 are calculated by e_qP = B-A / T in atmospheric CVD CVD silicon epitaxial system respectively. The cryogenic cryogenic process was used to further improve the purity of the silicon source. By controlling the vapor pressure of SiHCl_3, the resistivity of (4 ~ 8) × 10 ~ (-3) Ω cm, a silicon wafer with an epitaxial layer resistivity of 350 Ω · cm (an impurity concentration of 3.5 × 10 13 / cm 3) and a p / p ~ + / silicon epitaxial layer thickness of 120 μm Epitaxial wafer, made of the device breakdown voltage up to 1000V.