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本文拟讨论辐射加固的铝栅体硅CMOS集成电路的工艺优化和设计。文中描述了加固的基本考虑,部分工艺试验,辐照结果和工艺筛选结果及例行试验结果。一个较全面的方案,是要评价工艺参数对CMOS电路加固性能的影响,以建立一个有依据的辐射加固工艺。这里集中探讨改进的场氧工艺、栅氧工艺、版图设计和蒸铝工艺。研究所获得的优化加固工艺使器件的总剂量加固水平高于1×10~4Gy(Si)。文中评价了采用此加固工艺的器件成品率,并通过例行试验证明了器件的可靠性。
This article discusses the process optimization and design of a radiation-hardened aluminum-gate silicon CMOS integrated circuit. The article describes the basic considerations for reinforcement, some of the process tests, the results of irradiation and process screening, and the results of routine tests. A more comprehensive solution is to evaluate the influence of process parameters on the performance of CMOS circuits to establish an evidence-based radiation reinforcement process. Here focused on improved field oxygen process, gate oxygen technology, layout design and steaming aluminum process. The optimization and reinforcement technology obtained by the research makes the total dose of the devices higher than 1 × 10 ~ 4Gy (Si). The article evaluates the device yield using this reinforcement process and demonstrates the reliability of the device through routine experimentation.