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铁电薄膜与半导体集成产生了新一代非易失存储器,与传统的半导体非易失存储器比较具有突出的优点,是新一代IC卡的理想存储芯片.“,”Integration of ferroelectric thin film and semiconductor creates a new generation of non volatile memories. The ferroelectric non volatile memories have some advantages over the classical semiconductor memorizers, and they are the ideal memory chip for IC card.