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本专利提供一种红外辐射传感器,它由p型传导的单晶硅衬底(1)、n型传导的非晶硅膜层(2)以及欧姆电极(3)组成。衬底的比电阻大于 20欧姆/厘米,非晶硅膜层的厚度为(1.6-2.0)μm。在吸收(1-12)μm光谱波段的红外辐射时,上面一层掺有合金元素的硅层内激发的电子借助势垒通过p型硅层和n型硅层。
This patent provides an infrared radiation sensor consisting of a p-type conducting single crystal silicon substrate (1), an n-conducting amorphous silicon film layer (2) and an ohmic electrode (3). The specific resistance of the substrate is greater than 20 ohm / cm and the thickness of the amorphous silicon film is (1.6-2.0) μm. When absorbing infrared radiation in the (1-12) μm spectral band, the electrons excited in the silicon layer doped with the alloying element above pass through the barrier layer through the p-type silicon layer and the n-type silicon layer.