,Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termi

• 作 者: Wei-Fan Wang Jian-Feng Wang Yu-Min Zhang Teng-Kun Li Rui Xiong Ke Xu
• 机 构: School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, C
• 出 处: 中国物理B（英文版）
• 发表日期: 2020年4期
• 关键词: termination technology boron ion implantation vertical GaN Schottky barrier diod

The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized. Compared with the Schottky barrier diode (SBD) without boron-implanted termination, this SBD effectively improved the breakdown voltage from 189 V to 585 V and significantly reduced the reverse leakage current by 105 times. In addition, a high Ion/Ioff ratio of～108 was achieved by the boron-implanted technology. We used Technology Computer Aided Design (TCAD) to analyze reasons for the improved performance of the SBD with boron-implanted termination. The improved performance of diodes may be attributed to that B+ could confine free carriers to suppress electron field crowding at the edge of the diode, which could improve the breakdown voltage and suppress the reverse leakage current.