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采用射频溅射法于室温在玻璃基底上制备了铝掺杂ZnO(AZO)薄膜,研究了基底旋转速度(ωS)对薄膜形态、结构、光学和电学性质的影响。扫描电子显微镜横向图片显示,通过基底旋转能够产生致密的柱状结构。原子力显微镜图像表明,基底旋转状态下形成的样品其表面颗粒比基体静止状态下的颗粒小且致密,从而导致细小的晶粒尺寸。XRD结果表明,所有薄膜均为六方纤锌矿结构,c轴择优取向且分布有拉应力。紫外可见光区平均透光率在90%以上。当ωS=0 r/min时,电阻率处于最低值(8.5×10~(-3)?·cm),载流子浓度为1.8×10~(20)cm~(-3),霍尔迁移率为4.19 cm~2/(V·s)。对于其他样品,基底旋转会引起载流子浓度和霍尔迁移率的变化,从而导致电阻率增加。结果表明:基底旋转速度对AZO薄膜的形貌、结构、光学和电学性能存在较大影响。
Aluminum doped ZnO (AZO) films were prepared on glass substrates by RF sputtering at room temperature. The effects of substrate rotation speed (ωS) on the morphology, structure, optical and electrical properties of the films were investigated. Scanning electron microscopy horizontal pictures show that a dense columnar structure can be produced by substrate rotation. Atomic force microscopy images showed that the surface grains of the samples formed under the substrate rotation were smaller and denser than the matrix at rest, resulting in small grain sizes. XRD results show that all the films are hexagonal wurtzite structure, c-axis preferred orientation and distribution of tensile stress. The average transmittance of UV-visible light is more than 90%. When ωS = 0 r / min, the resistivity is the lowest (8.5 × 10 -3 cm -3) and the carrier concentration is 1.8 × 10 ~ (20) cm -3. The Hall mobility The rate was 4.19 cm ~ 2 / (V · s). For other samples, substrate rotation caused changes in carrier concentration and Hall mobility, resulting in an increase in resistivity. The results show that the substrate rotation speed has a great influence on the morphology, structure, optical and electrical properties of AZO thin films.