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利用新工艺制备的光电阴极具有面电阻小、对窄脉冲响应速度快、重复性好的优点。输出脉冲电压、脉冲宽度得到明显的改善。新工艺系在氧化铝基底上制备三碱光电阴极。为了改善其性能,氧化锡基底改为网格人。实测了网格光电阴极的脉冲性能。在氧化锡基底上再附加1～5层氧化锑就可以制作CsRbN_(a2)KSb光电阴极。获得了150～250μA/cm左右的灵敏度。
The photocathode prepared by the new process has the advantages of small surface resistance, fast response to narrow pulses and good repeatability. Output pulse voltage, pulse width has been significantly improved. The new process prepares a tribasic photocathode on an alumina substrate. In order to improve its performance, tin oxide substrate to grid people. Measured the grid photocathode pulse performance. CsRbN_ (a2) KSb photocathode can be made by adding 1 ~ 5 layers of antimony oxide on the tin oxide substrate. A sensitivity of about 150-250 μA / cm was obtained.