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采用在等离子体增强化学气相沉积 (PECVD)系统中沉积a_Si:H和原位等离子体逐层氧化的方法制备a_Si:H/SiO2 多层膜 .用快速热退火对a_Si:H/SiO2 多层膜进行处理 ,制备nc_Si/SiO2 多层膜 ,研究了这种方法对a_Si:H/SiO2 多层膜发光特性的影响 .研究发现对a_Si:H/SiO2 多层膜作快速热退火处理 ,可获得位于绿光和红光两个波段的发光峰 .研究了不同退火条件下发光峰的变化 .通过对样品的TEM、Raman散射谱和红外吸收谱的分析 ,探讨了a_Si:H/SiO2 多层膜在不同退火温度下的光致发光机理 .
A_Si: H / SiO2 multilayers were deposited by a-Si: H deposition and in-situ plasma oxidation by plasma enhanced chemical vapor deposition (PECVD) The effect of this method on the luminescent properties of a_Si: H / SiO2 multilayers was investigated. The results showed that the rapid thermal annealing of a_Si: H / SiO2 multilayers could result in the formation of nc_Si / Green and red light, and the changes of luminescence peak under different annealing conditions were studied.Through the analysis of the TEM, Raman scattering spectrum and infrared absorption spectrum of the sample, the effects of a_Si: H / SiO2 multilayer film on Photoluminescence Mechanism at Different Annealing Temperatures.