论文部分内容阅读
针对CdSiP_2晶体生长过程中,晶体表面与石英坩埚内壁严重粘连甚至开裂的问题,研究了柔性氮化硼(PBN)内衬坩埚生长CdSiP_2晶体的新工艺。运用X射线能量色散谱仪(EDS)和X射线光电子能谱仪(XPS)分别对两种坩埚材料生长的CdSiP_2晶体表面元素成分和化学状态进行测试发现,采用石英坩埚生长的CdSiP_2晶体表面主要组分元素为33.31%的Si和65.63%的O,晶体表面Si2p的结合能为103.2 e V,与文献中SiO_2的Si2p结合能一致。进一步的分析表明,高温CdSiP_2熔体离解产物与石英材料反应生成SiO_2界面层是导致晶体严重粘连,甚至开裂成碎块的重要原因;采用柔性氮化硼(PBN)内衬坩埚能有效解决晶体与器壁的粘连,生长的CdSiP_2晶体完整较好,表面层各组分元素含量接近CdSiP_2理论化学配比1∶1∶2,质量较高。
In order to solve the problem that CdSiP_2 crystal grows in the process of crystal growth, the surface of the crystal is seriously stuck to the inner wall of the quartz crucible and even cracked. A new process of growing CdSiP_2 crystal in the crucible with flexible boron nitride (PBN) was studied. The elemental composition and chemical state of CdSiP 2 crystals grown on two kinds of crucibles were tested by X-ray energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS), respectively. The main surface of CdSiP 2 crystals grown by quartz crucible The sub-element is 33.31% Si and 65.63% O, and the binding energy of Si2p on the crystal surface is 103.2 eV, which is consistent with that of Si2p in the literature. Further analysis shows that the reaction of high temperature CdSiP_2 melt with quartz material to form SiO_2 interfacial layer is one of the important reasons for the crystal serious adhesion and even cracking into fragments. The adoption of flexible boron nitride (PBN) lined crucible can effectively solve the problem of crystal and The adhesion of the wall and the growth of CdSiP 2 crystal are better and the content of each component in the surface layer is close to the theoretical mass ratio of CdSiP 2: 1: 1: 2.