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对不同氧流量下用直流磁控溅射法制备的ITO薄膜进行退火处理，并对退火后ITO薄膜的光电特性进行分析．结果表明，N2气氛下退火可以改善ITO薄膜的结晶性，同时使ITO薄膜质量得到优化，并显著提高ITO薄膜的透明性和电导性．
The ITO films prepared by direct current magnetron sputtering at different oxygen flow rates were annealed and the electro-optical properties of the annealed ITO films were analyzed. The results show that annealing in N2 atmosphere can improve the crystallinity of ITO thin films, optimize the quality of ITO thin films and significantly improve the transparency and electrical conductivity of ITO thin films.