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采用外置电感耦合等离子体化学气相沉积法,以高纯CH4/N2/CO2/H2作为反应气体,制备出非晶的a-CHON薄膜。研究了放电功率对薄膜沉积速率、表面形貌及光学性能的影响。结果表明沉积速率随着放电功率的增加而增加,而非线性增加;原子力显微镜分析结果表明放电功率对薄膜粗糙度有较大的影响;红外光谱分析表明了薄膜内部存在C-O,C=O,C≡N以及C-H键;紫外-可见-近红外光分析表明,薄膜的光学带隙随放电功率的增加而减小;薄膜折射率在可见光区的色散图表明,折射率随入射光频率的增加而减小,出现反常色散关系;而在同一波长下薄膜的折射率先随放电功率的增加而减小,而后又有所增加。
An a-CHON thin film was prepared by external inductively coupled plasma-enhanced chemical vapor deposition and high purity CH4 / N2 / CO2 / H2 as reaction gases. The influence of discharge power on the film deposition rate, surface morphology and optical properties was studied. The results showed that the deposition rate increased with the increase of discharge power, but increased non-linearly. The atomic force microscopy analysis showed that the discharge power had a significant influence on the film roughness. Infrared spectrum analysis showed that CO, C = O, C ≡N and CH bonds. The UV-Vis-NIR analysis shows that the optical band gap decreases with the increase of discharge power. The dispersion diagram of the refractive index of the film in the visible region shows that the refractive index increases with the increase of incident light frequency Decreases, and there is anomalous dispersion relationship. At the same wavelength, the refractive index of the film decreases with the increase of discharge power and then increases.