适于双向和中频应用的3.3kV高速IGBT模块

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研发了3.3kV高速IGBT模块。优化寿命控制极大降低了关断损耗和恢复损耗。该高速特性适用于双向和中频应用,例如谐振DC/DC转换器。展示了谐振DC/DC转换器模拟电路中IGBT的开关行为和二极管的反向恢复行为。显然,这种新设计的模块具有比传统高速模块更低的损耗,因此更适合与双向和中频应用。该设计概念也可用于6.5kV IGBT模块设计。另外,对谐振DC/DC转换器模拟电路,将新设计模块中二极管的损耗与3kV-SiC-JBS损耗做了比较。 Developed 3.3kV high-speed IGBT module. Optimized life control greatly reduces turn-off losses and recovery losses. This high speed feature is suitable for bidirectional and IF applications such as resonant DC / DC converters. The IGBT switching behavior and diode reverse recovery behavior in a resonant DC / DC converter analog circuit are demonstrated. Obviously, this new design of the module with lower loss than the traditional high-speed module, it is more suitable for bidirectional and IF applications. This design concept can also be used for 6.5kV IGBT module design. In addition, for the resonant DC / DC converter analog circuit, the diode loss in the new design module is compared with the 3kV-SiC-JBS loss.
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