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本文初步探讨了对压阻式传感器的微型化起限制作用的多种因素:根据(100)晶面硅片各向异性腐蚀的特点,得出了器件芯片最小尺寸与硅片厚度的关系;根据方膜和矩形膜上应力分布曲线,得出了在一定的图形位置偏差下压力灵敏度与硅膜几何尺寸的关系曲线;讨论了硅片厚度均匀性与力敏电阻尺寸对器件总尺寸的限制作用,比较了全桥结构和横向压阻X型结构对器件几何尺寸的要求。最后介绍了两种实用的微型压力传感器设计与其主要技术参数。
In this paper, a preliminary study of the piezoresistive sensor miniaturization from a variety of factors play a limiting role: According to the (100) crystal silicon anisotropic etching characteristics, the minimum chip size and the relationship between the thickness of the device; The relationship between the pressure sensitivity and the geometrical dimension of the silicon film at a certain position deviation of the pattern was obtained and the limiting effect of the uniformity of the thickness of the silicon wafer and the dimension of the force sensitive resistor on the overall size of the device was discussed , Compared the full bridge structure and lateral piezoresistive X-type structure of the device geometry requirements. Finally, two practical miniature pressure sensor designs and their main technical parameters are introduced.