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We report applications of a metallic film and a phase matching layer (PML) to increase the reflectivity of the cavity mirror in a long-wavelength InP-based vertical-cavity surface-emitting laser (VCSEL). The synthesis of the InGaAsP/InP distributed-Bragg reflector (DBR) with an Au fllm and the InP PML leads to the decrease of periods of the DBR multilayer stacks from 33 to 20 while keeping the reflectivity of the structure over 99%.The reflectivity over the whole forbidden band is significantly increased and become flatter compared to the bare DBR. The use of smaller DBR periods in a long wavelength VCSEL makes the epitaxial growth well controllable,decrease of the heat resistance, and decrease of the in-series electrical resistance of the devices. This can improve the reliability of the VCSEL growth and possibly cut down the cost of VCSEL devices.