High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector

• 作 者: 李冲 薛春来 李传波 刘智 成步文 王启明
• 机 构: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of
• 出 处: Chinese Physics B
• 发表日期: 2013年11期
• 关键词: photodetector bandwidth saturation doping comparable illumination cliff photodio

Uni-traveling-carrier photodiodes(UTC-PDs)with ultrafast response and high saturation output are reported.A gradient doping layer and a narrow InP cliff layer were introduced to enhance the saturation and bandwidth characteristics.We measured the dark current,photo response,bandwidth,and saturation current of the fabricated UTC devices.For a15-μm-diameter device,the dark current was 3.5 nA at a reverse bias of 1 V,and the 3-dB bandwidth was 17.2 GHz at a reverse bias of 5 V,which are comparable to the theoretically values.The maximum responsivity at 1.55μm was 0.32 A/W.The saturation output current was over 19.0 mA without bias.

Uni-traveling-carrier photodiodes (UTC-PDs) with ultrafast response and high saturation output were reported. A gradient doping layer and a narrow InP cliff layer were introduced to enhance the saturation and bandwidth characteristics. We measured the dark current, photo response, bandwidth, and saturation current of the fabricated UTC devices. For a15-μm-diameter device, the dark current was 3.5 nA at a reverse bias of 1 V, and the 3-dB bandwidth was 17.2 GHz at a reverse bias of 5 V, which are comparable to the theoretically largest value. The maximum responsivity at 1.55 μm was 0.32 A / W. The saturation output current was over 19.0 mA without bias.