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由于体硅微机械工艺制作绝压压阻式压力传感器的过程中,通过Si-Si直接键合形成的带真空腔的微结构在高温和大气压的作用下会产生塑性形变,对器件制作工艺中微结构发生的塑性变形及其对器件性能的影响进行了研究。基于Von Mises屈服准则和有限元仿真,微结构发生塑性变形的临界工艺条件可以通过比较微结构的最大等效应力和材料屈服强度进行预测。在器件的制作过程中,Si-Si键合和扩散电阻条的工艺顺序不同,将会导致塑性变形对器件的影响程度也不同。实验结果表明器件塑性形变量与弹性形变量成线性正比关系;在先进行Si-Si键合后扩散电阻的情况下,器件电阻值远远偏离设计值,反之则会减小塑性变形对器件电阻值的影响。
Due to the bulk silicon micromachining process for making absolute piezoresistive pressure sensors, the microstructure with vacuum chamber formed by the direct bonding of Si-Si will undergo plastic deformation under the action of high temperature and atmospheric pressure, and the device manufacturing process The plastic deformation of the microstructure and its influence on the device performance were studied. Based on the Von Mises yield criterion and finite element simulation, the critical conditions of plastic deformation of microstructures can be predicted by comparing the maximum equivalent stress and the yield strength of the microstructure. In the device manufacturing process, Si-Si bonding and diffusion resistance of the different order of the bar, will result in plastic deformation of the device to a different extent. Experimental results show that the plastic deformation of the device linearly proportional to the amount of elastic deformation; in the case of diffusion resistance after Si-Si bonding, the device resistance is far from the design value, otherwise it will reduce the plastic deformation of the device resistance Effect of value.