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在开管流动氢气的常规滑块舟系统中,在CdTe(111)A面衬底上已液相外延出Hg_(1-x)Cd_xTe(0.17≤x≤0.3)外延层。对于x=0.2的原生层,空穴浓度为10~(17)~10~(18)cm~(-3),霍尔迁移率为100~500cm~2/Vs,层的表面类似于镜面,外延层的电子微探针分析(EMPA)数据表明,外延层和衬底间的界面有陡的组分过渡,在汞压下,研究了250℃~400℃的温度范围内退火对原生层特性的影响。在400℃退火时,在接近界面处观察到组分变化。与此相反,在250℃~300℃的温度范围内退火时得到性能好的n型层,没有明显的组分变化。且在CdTe衬底的(111)A面上连续生长成双异质结Hg_(1-x)Cd_xTe/Hg_(1-y)Cd_yTe。
In a conventional slider boat system that opens pipe for flowing hydrogen, an epitaxial Hg_ (1-x) Cd_xTe (0.17≤x≤0.3) epitaxial layer has been liquid-phase epitaxy on a CdTe (111) A surface substrate. For the primary layer with x = 0.2, the hole concentration is 10-17 cm-10-18 cm -3 and the Hall mobility is 100-500 cm-2 / Vs. The surface of the layer is similar to the mirror, Epitaxial layer electron microprobe analysis (EMPA) data show that the interface between the epitaxial layer and the substrate has a steep component transition, under the mercury pressure, studied the annealing temperature in the range of 250 ℃ ~ 400 ℃ on the primary layer properties Impact. Upon annealing at 400 ° C, a change in composition was observed near the interface. In contrast, a good-performance n-type layer was obtained when annealed in the temperature range of 250 ° C to 300 ° C with no significant change in composition. And successively grows into a double heterojunction Hg_ (1-x) Cd_xTe / Hg_ (1-y) Cd_yTe on the (111) A surface of the CdTe substrate.