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本文报道了LEC-SI-GaAs单晶生长研究及其结果.结合材料应用,生长了一种轻掺铬SI-GaAs单晶.用这种单晶作衬底,经汽相外延,离子注入及分子束外延后制作器件,都取得了满意的结果.
In this paper, we report the research and results of LEC-SI-GaAs single crystal growth.According to the application of the material, a lightly-doped SI-GaAs single crystal is grown.It uses this kind of single crystal as substrate, After the molecular beam epitaxy production devices, have achieved satisfactory results.