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采用溶胶-凝胶法在n型Si(100)衬底上沉积Li-N双掺杂ZnO薄膜,经X射线衍射和扫描电镜图片分析,所制备薄膜具有多晶纤锌矿结构和高的c轴择优取向.室温下霍尔效应测试结果显示Li-N双掺杂ZnO薄膜具有p型导电特性.在Li掺杂量为15.0at%,Li/N(摩尔比)为1∶1,700℃退火等优化条件下得到的最佳电学性能结果是:电阻率为0.34Ω.cm,霍尔迁移率为16.43cm2/V.s,载流子浓度为2.79×1019cm-3.另外,室温下光致发光谱显示,所制备样品具有较强的近紫外和紫光发射,而可见光区范围内与缺陷相关的深能级发射则较微弱.本文还就掺杂浓度和退火温度对薄膜的结构、光学性能以及电学性能的影响进行了讨论.
Li-N double-doped ZnO thin films were deposited on n-type Si (100) substrates by sol-gel method. The films were characterized by X-ray diffraction and scanning electron microscopy. Axis preferred orientation.The results of Hall effect test at room temperature show that the p-type conductivity of the Li-N double-doped ZnO thin film is p-type conductive.With Li doped at 15.0at%, Li / N (molar ratio) at 1: Optimum conditions obtained under the best electrical performance results are: resistivity of 0.34Ω.cm, the Hall mobility of 16.43cm2 / Vs, the carrier concentration of 2.79 × 1019cm-3.In addition, the photoluminescence spectrum at room temperature showed , The prepared samples have strong near-UV and violet emission, while the deep-level emission related to defects in the visible range is weaker than the weak emission.In this paper, the structure, optical properties and electrical properties The impact of the discussion.