论文部分内容阅读
本文借助背散射沟道分析技术系统地研究了Be离子注入InSb快速热退火后的剩余损伤,采用俄歇电子能谱仪分析了InSb表层组分的化学配比,并对背散射分析的结果进行了详细的讨论。
In this paper, the backscattering channel analysis technique was used to systematically study the residual damage after In-Sb rapid thermal anneal by Be ion implantation. The chemical composition of InSb surface layer was analyzed by Auger electron spectroscopy, and the results of backscattering analysis A detailed discussion.