论文部分内容阅读
,Study of 4H-SiC junction barrier Schottky diode using field guard ring termination
【机 构】
：
School of Microelectronics,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidia
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2010年9期
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