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采用热封闭系统对850nm氧化物限制型VCSEL的温度特性进行了研究.实验证实该器件在80℃仍能正常工作,在20~80℃的温度区间内,器件的斜率效率由0 .3mW/mA降到0 2mW/mA.根据阈值电流的温度依赖性得出T0=350K,器件的基模红移为0 11nm/mW,实验确定其热阻为2 .02℃/mW.
The temperature characteristics of the 850nm oxide-limited VCSEL were investigated by using a thermal-sealing system.The experimental results show that the device still works well at 80 ℃ and the slope efficiency of the device ranges from 0.3mW / mA Down to 0 2mW / mA. Based on the temperature dependence of the threshold current, T0 = 350K and the fundamental redshift of the device is 0 11nm / mW. The thermal resistance was determined experimentally to be 2.02 ° C / mW.