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砷化镓射频(RF)元件凭借着优异的杂讯处理及高线性等特色,成为高效能通讯设备开发人员长久以来的首选方案;然而,近来随着绝缘层覆硅(SOI)制程技术的突破,以硅材料为基础的RF元件性能已大幅突破,成为替代砷化镓方案的新选择。近来硅基产品在技术上的突飞猛进,再结合设计制程的改变,使其在高效能射频(RF)及微波应用中,已逐步展现做为砷化镓替代方案的可行性。设备技术的快速进展带动的需求,通常可以引导发展出最佳设计,即使此
Gallium arsenide (RF) devices have long been the preferred solution for developers of high-performance communications equipment due to their superior noise handling and high linearity. However, with the recent breakthroughs in silicon-on-insulator (SOI) process technology , The performance of the RF component based on silicon material has been greatly improved, becoming a new alternative to GaAs. Recently, silicon-based products have made rapid advances in technology. Combined with changes in the design process, they have gradually demonstrated the feasibility of using GaAs as an alternative to high-performance radio frequency (RF) and microwave applications. Demand driven by the rapid advances in device technology can often lead to the development of optimal designs, even though