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LDMOS 功率管工作在线性区时,R_(DSon)取决于沟道区及漂移区的图形尺寸与掺杂浓度。非自对准LDMOS 功率管漂移区的一端与栅极没有自对准关系,因此一些工艺偏差(诸如光刻 CD、重叠、刻蚀 CD等)均可影响器件的沟道长度。Motorola 公司在 SMOS7LV~(TM)工艺开发过程中,曾发现非自对准 LDMOS功率管 R_(DSon)离散比规范值大8%(1σ)。有关 R_(DSon)的离散的分析表明,主要是因重叠性不良而引起。优化对准方案之后,R_(DSon)离散可由原先的～12%降至<3%。
When the LDMOS power transistor operates in the linear region, R_ (DSon) depends on the pattern size and doping concentration of the channel region and the drift region. Non-self-aligned LDMOS power-transistor drift regions have one end that is not self-aligned to the gate, so some process variations, such as lithography CDs, overlays, etched CDs, can affect the channel length of the device. During the development of the SMOS7LV-TM process, Motorola Corporation found that the dispersion of non-self-aligned LDMOS power transistors, R DSon, was 8% (1σ) greater than the normalized value. A discrete analysis of R_ (DSon) shows that it is mainly due to poor overlap. After optimizing the alignment scheme, the R_ (DSon) dispersion can be reduced from ~ 12% to <3%.