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Y98-61303-789 9905776固体器件:先进的双极器件和 MOS 器件(含7篇文章)=Session 32:solid state devices-advanced bipolar andMOS devices[会,英]//1997 IEEE International Elec-tron Devices Meeting.—789～818(G)本部分7篇文章的主要内容是有关基于 SiGe 的器件和新的 MOS 工艺的现代技术水平。具体论述了130GHz f_T SiGe 异质结双极晶体管(HBT)工艺,采用具有9.3ps ECL 相延滞的 SMI 电极的选择外延 SiGe-HBT,无线频率 SiGe HBT 的大信号特性,碳结合对SiGe HBT 性能和工艺极限的影响,采用低成本
Y98-61303-789 9905776 Solid Devices: Advanced Bipolar and MOS Devices with 7 Articles = Session 32: solid state devices-advanced bipolar and MOS devices // 1997 IEEE International Elec-tron Devices Meeting .-789 ~ 818 (G) The main focus of the seven articles in this section is on the state of the art of SiGe-based devices and new MOS processes. The 130GHz f_T SiGe Heterojunction Bipolar Transistor (HBT) process is discussed in detail. The selective epitaxial SiGe-HBT with SMI electrode with 9.3 ps ECL phase delay, large signal characteristics of SiGe HBT with radio frequency, The impact of process limits, the use of low-cost