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The growth of well-aligned carbon nanotube (CNT) arrays using a heat chemical vapor deposition system on silicon substrates is reported. The growth properties of CNT arrays are studied as a function of synthesis conditions. It is found that 750℃ and 10 nm Fe film are suitable conditions for the growth of well-aligned CNT arrays. CNT arrays with a uniform diameter, thick tube wall and firm cohesion to the Si substrate can be grown for C2H2 concentration of 27%. Based on the experiment, the processes of improving the alignment of CNT arrays and cohesion between CNT arrays and Si substrates are discussed.
The growth of well-aligned carbon nanotube (CNT) arrays using a heat chemical vapor deposition system on silicon substrates is reported. The growth properties of CNT arrays are studied as a function of synthesis conditions. It is found that 750 ° C and 10 nm Fe The films are suitable for the growth of well-aligned CNT arrays. CNT arrays with a uniform diameter, thick tube wall and firm cohesion to the Si substrate can be grown for C2H2 concentration of 27%. Based on the experiment, the processes of improving the alignment of CNT arrays and cohesion between CNT arrays and Si substrates are discussed.