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本文研究了激光退火使离子注Zn的GaAs层获得高的表面浓度作P~+层.所用的调Q红宝石激光器能量密度1～1.5J/cm~2、脉宽20ns.霍尔测量得到的表面空穴浓度达3.3 × 10~(19)-8.7 ×10~(20)/cm~3,红外等离子共振极小测量结果与之相符.电子衍射实验观察到注入无定形层经激光退火后再结晶的单晶衍射花样. 另外,也报道了用激光合金化在N型和P型体GaAs材料上制备欧姆接触的结果,所得到的比接触电阻比通常热合金化的比接触电阻略低,其表面形貌也比热合金化的好.
In this paper, laser annealing was used to obtain a high surface concentration of Ga + ion-implanted Zn as P ~ + layer.The Q-switched ruby laser used has an energy density of 1 ~ 1.5 J / cm ~ 2 and a pulse width of 20 ns.The measured surface The hole density reaches 3.3 × 10 ~ (19) -8.7 × 10 ~ (20) / cm ~ 3, and the results of the infrared plasma resonance measurement are consistent with the results.The electron diffraction experiment shows that the amorphous layer is recrystallized after laser annealing In addition, the results of laser-alloyed preparation of ohmic contacts on N-type and P-type GaAs materials have also been reported, resulting in a slightly lower specific contact resistance than the usual thermal alloying with a slightly lower contact resistance The surface morphology is also better than the hot alloying.