论文部分内容阅读
利用扫描电子显微镜、Ｒａｍａｎ谱和Ｘ射线光电子能谱，研究了Ｓｉ衬底上热灯丝ＣＶＤ金刚石膜的核化和早期生长．在－３００Ｖ和１００ｍＡ条件下预处理１５ｍｉｎ，镜面抛光的Ｓｉ（１００）表面上金刚石核密度超过了１０９ｃｍ－２，但是核的分布极不均匀且可分为三个区域：Ａ区，边缘处以锥体为主；Ｂ区，位于边和中心之间过渡区是纳米金刚石；Ｃ区，中心处有ＳｉＣ层．无偏压下生长４ｈ后，Ａ区形成许多大而弧立的金刚石颗粒，Ｂ区成为织构金刚石膜，而Ｃ区变为含有大量缺陷的连续金刚石膜．衬底负偏压增强金刚石核化是由于离子轰击和发射电子同时作用的结果，离子流本身的不均匀导致核化的不均匀性．
The nucleation and early growth of hot filament CVD diamond films on Si substrates were investigated by scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. At -300 V and 100 mA for 15 min, the density of diamond nuclei on mirror-polished Si (100) surface exceeds 109 cm-2, but the distribution of nuclei is very uneven and can be divided into three regions: region A, Body; B zone, located between the edge and the center of the transition zone is nano-diamond; C zone, the center of the SiC layer. After 4h growth without bias, many large and arcuate diamond particles were formed in region A, and the textured region B became a textured diamond film, while region C became a continuous diamond film containing a large number of defects. The negative bias of the substrate enhances the nucleation of diamond due to the simultaneous action of ion bombardment and electron emission. The inhomogeneity of the ion flux itself leads to the nucleation heterogeneity.