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自60年代以来,在Ⅲ-Ⅴ族化合物衬底上利用液相外延(LPE)生长工艺已经研制和生产了许多半导体光电器件。采用异质结的器件在其中占有极其重要的作用。这些器件包括发光管、激光器、探测器、太阳能电池、半导体光阴极以及化合物光电集成等等。本文将就LPE生长的原理、方法、装置以及生长质量等问题进行一些简述。一、前言制作光电器件选择哪类异质结的依据:1.有源层要满足合适的带隙,以便发射和吸收合适波长的光。波长与带隙的关系为2.异质结两侧材料的晶格常数必须尽量接近,才能得到匹配完整的异质结,以减少由失配位错引起的复合中心或散射中
Since the 1960s, many semiconductor optoelectronic devices have been developed and produced on III-V compound substrates using a liquid phase epitaxy (LPE) growth process. Devices using heterojunctions play an extremely important role. These devices include LEDs, lasers, detectors, solar cells, semiconductor photocathodes, and compound optoelectronics integrations. This article will give a brief account of the LPE growth principles, methods, devices, and growth quality issues. I. Preface The basis for making optoelectronic devices to choose which type of heterojunction: 1. The active layer to meet the appropriate band gap in order to launch and absorb the appropriate wavelength of light. The relationship between the wavelength and the bandgap is 2. The lattice constants of the materials on both sides of the heterojunction must be as close as possible to obtain a well-matched heterojunction to reduce recombination centers or scattering caused by misfit dislocations