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在实际THZ负折射指数物质应用中,形状的改变和现有的光刻技术的精度,对负折射特性造成什么影响研究在实际工程设计中具有重要意义。下面利用有限积分法模拟形状变化和光刻精度产生的缺陷对负折射谐振频率和通带的影响。得出由于谐振环之间的耦合,SRR对称破缺影响谐振频率和通带。光刻技术的精度满足THZ负折射指数物质的要求。
In practical application of THZ negative refractive index material, the influence of the change of shape and the precision of the existing photolithography technology on the negative refractive properties is of great significance in the practical engineering design. The following use of finite integral method to simulate the shape change and lithography accuracy defects on the negative refraction resonance frequency and the passband. It is concluded that due to the coupling between the resonant rings, SRR symmetrical breaking affects the resonant frequency and the passband. The accuracy of lithography technology meets the THZ negative refractive index material requirements.