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反应腔室晶片表面温度分布是影响薄膜沉积均匀性的重要因素。本文以载有晶片的典型化学气相沉积反应腔室为研究对象,考虑了晶片与加热盘之间的微小间隙导致的低压下流固接触面的温度跳跃现象,建立了腔室温度仿真模型。通过模型和实验研究了腔室气压和气体流量对晶片表面温度分布的影响,并研究了温度分布轮廓的调节方法及传热结构设计。研究结果表明,晶圆表面平均温度随气压的增加而增加,随气体流量的增加而降低,晶片从中心到边缘温度分布轮廓存在下降的趋势。通过在加热盘和晶片之间加入阻抗介质,可以有效调节晶片表面温度分布轮廓。本文最后通过仿真手段,得到了能使晶片表面温度均匀分布的阻抗介质表面形状。本文的研究结果对指导腔室结构设计和工艺控制具有重要意义。
The surface temperature distribution of the reaction chamber wafer is an important factor affecting the uniformity of the film deposition. In this paper, a typical chemical vapor deposition reaction chamber containing a wafer is taken as a research object. The temperature jump phenomenon of the solid-liquid contact surface at a low pressure caused by the small gap between the wafer and the heating disk is considered, and a chamber temperature simulation model is established. The effects of chamber pressure and gas flow on the surface temperature distribution of the wafer were studied by means of experiments and models. The adjustment of temperature profile and the design of heat transfer structure were also studied. The results show that the average temperature of the wafer surface increases with the increase of gas pressure and decreases with the increase of gas flow rate, and the temperature distribution profile of the wafer tends to decrease from the center to the edge. By adding an impedance medium between the heating plate and the wafer, the wafer surface temperature profile can be effectively adjusted. In the end, the surface shape of the impedance medium which can make the temperature of the surface of the chip uniform distribution is obtained by simulation. The research results of this paper are of great significance to guide the design of chamber structure and process control.