论文部分内容阅读
Modern electronic components are very sensitive to the radiative environment in space. A SEU will occur if the charge collected at the sensitive node is greater than the critical charge (Qc) while high-energy and/or ionizing particles (protons, heavy ions and electrons) go though semi-conductor devices. The physical mechanisms leading to SEU can be described as the charge deposition induced by a heavy ion interaction within a sensitive volume (SV) followed by the charge collection at the output node of the circuit. For simplification purpose, it is modeled by using a Rectangular ParallelePided volume (RPP). The dimensions of the SV were experimentally estimated by accelerator measuring the LET (linear energy transition) dependent cross section of the device. Using Atmel AT60142F SRAM accelerator's test data[1], the lateral dimensions of the SV can be deduced from σsat (the saturation cross section)
Modern electronic components are very sensitive to the radiative environment in space. A SEU will occur if the charge collected at the sensitive node is greater than the critical charge (Qc) while high-energy and / or ionizing particles (protons, heavy ions and electrons ) go though semi-conductor devices. The physical mechanisms leading to SEU can be described as the charge deposition induced by a heavy ion interaction within a sensitive volume (SV) followed by the charge collection at the output node of the circuit. , it is modeled by using a Rectangular ParallelePided volume (RPP). The dimensions of the SV were experimentally estimated by accelerator measuring the LET (linear energy transition) dependent cross section of the device. Using Atmel AT60142F SRAM accelerator's test data [1], the lateral dimensions of the SV can be deduced from σsat (the saturation cross section)