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在切克劳斯基液封法(LEC)制得的In_(0.003)Ga_(0.997)As圆片上,直接用注入制作的场效应晶体管阵列比按同样工序在常规的LECGaAs圆片上制得的场效应晶体管阵列显示出更好的阈值电压均匀性。然而,不论在掺铟的还是在常规的LEC GaAs衬底上,晶体管的阈值电压和与位错的接近程度并没有关系。观察到的阈值电压与GaAs衬底的局部位错浓度有关这一现象,可能导致阈值电压受其位错接近程度的影响的错误结论。
In the field of In_ (0.003) Ga_ (0.997) As prepared by the Czochralski method (LEC), the field effect transistor array fabricated by direct injection was more stable than the field produced by the same process on conventional LECGaAs wafers The effect transistor array shows better threshold voltage uniformity. However, regardless of whether indium-doped or conventional LEC GaAs substrates, the threshold voltage of the transistor is not related to the proximity of the dislocations. The observation that the threshold voltage is related to the local dislocation concentration of the GaAs substrate may lead to erroneous conclusion that the threshold voltage is affected by the proximity of its dislocations.