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采用微波等离子体化学气相沉积(MPCVD)技术,在甲烷和氢气的混合气体中,通过掺入微量氮气的方法,合成了掺氮金刚石薄膜.利用扫描电子显微镜、拉曼光谱和透射电子显微镜对薄膜的形貌和结构进行了表征.研究结果表明:处于基片中心位置的薄膜具有比较高的成核密度,成核密度高达4.8×108cm-2,并且具有〈001〉的择优取向,晶粒呈立方金刚石特征,但沿{111}晶面生长时存在大量层错.处于基片边缘的薄膜成核密度较低,晶粒为6H型多型金刚石结构,而且多型金刚石的出现,导致金刚石孪晶关系的变化.此外,根据薄膜的生长速率,探讨了MPCVD过程中掺氮对薄膜生长行为的影响.
Nitrogen-doped diamond films were synthesized by the microwave plasma chemical vapor deposition (MPCVD) technique in a mixed gas of methane and hydrogen by adding a trace amount of nitrogen. The films were characterized by scanning electron microscopy, Raman spectroscopy and transmission electron microscopy The results show that the film at the center of the substrate has a relatively high nucleation density of 4.8 × 108cm-2 and a preferred orientation of <001> However, there are a large number of faults along the {111} crystal plane. The nucleation density of the thin film at the edge of the substrate is low and the grain size is 6H type polycrystalline diamond. The appearance of polycrystalline diamond causes diamond twins In addition, according to the growth rate of the film, the influence of nitrogen on the growth behavior of the film during the MPCVD process is discussed.