Investigation on Initial Growth of Er_2O_3 Films on Si(001)

• 作 者: 朱燕艳 方泽波 廖灿 陈圣 徐闰
• 机 构: Department of Mathematics and Physics Shanghai University of Electric Power,Surface Physics Laborat
• 出 处: Journal of Rare Earths
• 发表日期: 2007年S1期
• 关键词: inevitably capture epitaxial remove attributed continued insufficient supposed c

The epitaxial growth of Er2O3 films has been achieved on Si(001) substrates by MBE at the growth temperature of 700 ℃ in an oxygen pressure of 7×10-6 Torr. Synchrotron radiation photoemission spectroscopy was used to study the initial growth of Er2O3 films on Si in O2 pressures of 7×10-6 Torr. An interface layer was observed at the initial growth of Er2O3 film on Si even at room temperature, which is supposed to be attributed to the effect of the Er atom catalytic oxidation effect. With the film growth process continued, oxygen deficient Er oxide will capture oxygen from the interface layer which is formed inevitably at the initial growth of Er2O3 film and thus reduce and even remove the interface layer if the condition of O2 pressure is a little insufficient at a high substrate temperature.

The epitaxial growth of Er2O3 films has been achieved on Si (001) substrates by MBE at the growth temperature of 700 ° C in an oxygen pressure of 7 × 10-6 Torr. Synchrotron radiation photoemission spectroscopy was used to study the initial growth of Er 2 O 3 films On Si in O2 pressures of 7 × 10-6 Torr. An interface layer was observed at the initial growth of Er2O3 film on Si even at room temperature, which is supposed to be attributed to the effect of the Er atom catalytic oxidation effect. With the film growth process continued, oxygen deficient Er oxide will capture oxygen from the interface layer which is formed inevitably at the initial growth of Er2O3 film and thus reduce and even remove the interface layer if the condition of O2 pressure is a little insufficiency at a high substrate temperature.