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应用Sol-Gel工艺制备了BST薄膜 .应用复阻抗谱和模量谱技术研究了BST薄膜的介电响应 ,实验结果表明 :BST薄膜的阻抗谱曲线是一个完整的半圆 ,且阻抗谱半圆存在压低现象 ,而与此对应 ,复阻抗和复模量的频谱曲线只存在一个峰值 ,表明BST薄膜的介电响应主要起源于样品的晶粒体行为 ,而晶粒边界以及电极与薄膜界面的贡献可以忽略 .交直流电导分析结果表明 ,BST薄膜的交直流电导激活能分别为 93.5kJ mol和 1 0 0 .3kJ mol,BST薄膜存在这一激活能数值的主要原因是薄膜中氧空位的迁移引起的
The BST thin films were prepared by Sol-Gel process.The dielectric response of BST thin films was investigated by using complex impedance spectroscopy and modulus spectroscopy. The experimental results show that the impedance spectrum of BST thin films is a complete semicircle, However, there is only one peak in the spectral curves of complex impedance and complex modulus, which indicates that the dielectric response of BST mainly originates from the crystal behavior of the sample, and the contribution of the grain boundary and the interface between the electrode and the thin film can be Neglected.The results of AC and DC conductance show that the AC and DC activation energies of BST films are 93.5 kJ mol and 100 kJ mol respectively. The main reason for the activation energy of BST films is the migration of oxygen vacancies in the films