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利用过滤阴极真空电弧技术制备了sp3键含量不小于80%的四面体非晶碳(ta-C)膜.利用冷阴极潘宁离子源产生不同能量的氮离子对制备的ta-C薄膜进行轰击,通过X射线光电子能谱和原子力显微镜对薄膜表面结构与形貌进行分析研究.研究表明,随着氮离子的轰击能量的增大,薄膜中的CN键结构略有增大,形成了轻N掺杂;同时,在薄膜表层发生了sp3键结构向sp2键结构的转化;薄膜的表面粗糙度在经过氮离子轰击后从0.2nm减小至0.18nm,然后随着轰击能量的增大,表面的粗糙度又增大到0.33nm.氮离子轰击前后的ta-C薄膜的摩擦系数发生显著改变,从轰击前的0.09nm左右增大至0.16nm左右,但是轰击后的薄膜的摩擦系数与氮离子轰击能量没有明显的依赖关系.
The tetrahedron amorphous carbon (ta-C) film with sp3 bond content of not less than 80% was prepared by using the filtered cathode vacuum arc technique. The prepared ta-C film was bombarded by using cold cathode Penning ion source to generate nitrogen ions with different energies , The structure and morphology of the film surface were analyzed by X-ray photoelectron spectroscopy and atomic force microscopy.The results show that with the increase of bombardment energy of nitrogen ions, the CN bond structure in the film slightly increases, forming a light N Doping. At the same time, the sp3 bond structure was transformed into the sp2 bond structure in the surface of the thin film. The surface roughness of the thin film decreased from 0.2 nm to 0.18 nm after being bombarded by nitrogen ions, and then with the increase of bombardment energy, The roughness of the ta-C thin film before and after nitrogen ion bombardment changed significantly from about 0.09 nm before the bombardment to about 0.16 nm, but the friction coefficient of the thin film after bombardment and the nitrogen Ion bombardment energy has no obvious dependence.