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本文报道了UHF频段小型低噪声GaAs MESFET放大器的设计考虑、射频性能和试验结果。采用特殊的匹配网络和CAD技术使电路达到小型化和最佳化。设计的二级700MHz和三级1000MHz放大器均制作在50×60×0.8mm~3的陶瓷基片上。其射频性能分别为:功率增益G_P为25dB(最佳29dB)和30dB,噪声系数NF低于1.1dB(最佳0.8dB)和1.2dB,带宽W约为40MHz(3dB)和100MHz(1dB)。用700MHz放大器装成的卫星直播电视接收机,接收图像清晰,伴音音质良好。
This article reports the design considerations, RF performance, and test results for a small, low-noise GaAs MESFET amplifier in the UHF band. Adopt special matching network and CAD technology to make the circuit miniaturized and optimized. The design of the two 700MHz and three 1000MHz amplifiers are produced in the 50 × 60 × 0.8mm ~ 3 ceramic substrate. Their RF performance is 25 dB (best 29 dB) and 30 dB for the power gain G_P, the noise figure NF is less than 1.1 dB (best 0.8 dB) and 1.2 dB, and the bandwidth W is about 40 MHz (3dB) and 100 MHz (1 dB). 700MHz amplifier installed into the satellite broadcast TV receiver, receiving images clear, sound good sound quality.