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1 前言长期以来,绝大多数功率混合集成电路的陶瓷封装材料一直沿用Al_2O_3,和BeO陶瓷,但由于性能、环保、成本等因素,已不能完全适合功率电子器件发展的需要,因此,一种综合性能优越的新型电子陶瓷—A1N陶瓷,无疑将成为传统Al_2O_3和BeO封装和基板的替代材料。 AIN是—种纤锌矿结构的Ⅲ—Ⅴ族合成化合物,于19世纪60年代被发现。尽管单晶AIN理论热导率达到320W/mK,单晶或多晶AIN因为晶格中隙入氧和金属杂质而使热导率降低很多。历史上
For a long time, Al 2 O 3 and BeO ceramics have been used in the ceramic packaging materials of most power hybrid ICs for a long time. However, due to the factors such as performance, environmental protection and cost, they are not fully suitable for the development of power electronic devices. Therefore, Superior performance of the new electronic ceramic-A1N ceramic, will undoubtedly become the traditional Al_2O_3 and BeO package and substrate alternative materials. AIN is a type III-V synthetic compound of wurtzite structure, discovered in the 1860s. Although the theoretical single-crystal AIN thermal conductivity reaches 320 W / mK, single crystal or polycrystalline AIN has a much lower thermal conductivity due to interstitial oxygen and metal impurities in the crystal lattice. in history