,Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

• 作 者: Xiao-Song Zhao Wei-Hua Han Yang-Yan Guo Ya-Mei Dou Fu-Hua Yang
• 机 构: Engineering Research Center for Semiconductor Integrated Technology,Beijing Engineering Center of Se
• 出 处: 中国物理B（英文版）
• 发表日期: 2018年9期
• 关键词: ionized dopant atom junctionless nanowire transistor hopping thermal activation

We demonstrate electron transport spectroscopy through a dopant atom array in n-doped silicon junctionless nanowire transistors within a temperature range from 6 K to 250 K.Several current steps are observed at the initial stage of the transfer curves below 75 K,which result from the electron transport from Hubbard bands to one-dimensional conduction band.The current-off voltages in the transfer curves have a strikingly positive shift below 20 K and a negative shift above 20 K due to the electrostatic screening induced by the ionized dopant atoms.There exists the minimum electron mobility at a critical temperature of 20 K,resulting from the interplay between thermal activation and impurity scattering.Furthermore,electron transport behaviors change from hopping conductance to thermal activation conductance at the temperature of 30 K.